inchange semiconductor isc product specification isc silicon npn power transistor bd545/a/b/c description collector current -i c = 15a collector-emitter breakdown voltage- : v (br)ceo = 40v(min)- bd545; 60v(min)- BD545A 80v(min)- bd545b; 100v(min)- bd545c complement to type bd546/a/b/c applications designed for use in general purpose power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bd545 40 BD545A 60 bd545b 80 v cbo collector-base voltage bd545c 100 v bd545 40 BD545A 60 bd545b 80 v ceo collector-emitter voltage bd545c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a collector power dissipation @ t a =25 3.5 p c collector power dissipation @ t c =25 85 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.47 /w r th j-c thermal resistance,junction to ambient 35.7 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor bd545/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd545 40 BD545A 60 bd545b 80 v (br)ceo collector-emitter breakdown voltage bd545c i c = 30ma ;i b =0 b 100 v v ce( sat )-1 collector-emitter saturation voltage i c = 5a; i b = 0.625a b 0.8 v v ce( sat )-2 collector-emitter saturation voltage i c = 10a; i b = 2a 1.0 v v be( on ) base-emitter on voltage i c = 10a; v ce = 4v 1.8 v bd545 v ce = 40v; v be = 0 BD545A v ce = 60v; v be = 0 bd545b v ce = 80v; v be = 0 i ces collector cutoff current bd545c v ce = 100v; v be = 0 0.4 ma bd545/a v ce = 30v; i b = 0 b i ceo collector cutoff current bd545b/c v ce = 60v; i b = 0 b 0.7 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 4v 60 h fe-2 dc current gain i c = 5a; v ce = 4v 25 h fe-3 dc current gain i c = 10a; v ce = 4v 10 switching times t on turn-on time 0.6 s t off turn-off time i c = 6a; i b1 = -i b2 = 0.6a; r l = 5 ; v be( off ) = -4v 1.0 s isc website www.iscsemi.cn 2
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